Hydrogenated amorphous silicon /
Yazar: | |
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Materyal Türü: | Kitap |
Dil: | English |
Baskı/Yayın Bilgisi: |
Cambridge ; New York :
Cambridge University Press,
1991.
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Konular: | |
Online Erişim: | http://www.loc.gov/catdir/samples/cam034/90002387.html http://www.loc.gov/catdir/description/cam024/90002387.html http://www.loc.gov/catdir/toc/cam028/90002387.html |
LEADER | 01829cam a22003971 4500 | ||
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001 | 67627 | ||
003 | OCoLC | ||
005 | 20161229185130.0 | ||
008 | 900621s1991 enka b 001 0 eng | ||
010 | |a 90002387 | ||
020 | |a 0521371562 | ||
020 | |a 9780521371568 | ||
035 | |a (OCoLC)21972424 | ||
040 | |a TRMEMSKU | ||
049 | |a TR7VH | ||
050 | 0 | 0 | |a QC611.8.S5 |b S76 1991 |
100 | 1 | |a Street, R. A. |9 239247 | |
245 | 1 | 0 | |a Hydrogenated amorphous silicon / |c R.A. Street. |
260 | |a Cambridge ; |a New York : |b Cambridge University Press, |c 1991. | ||
300 | |a xiv, 417 p. : |b ill. ; |c 22 cm. | ||
504 | |a Includes bibliographical references and index. | ||
505 | 2 | |a 1. Introduction -- 2. Growth and structure of amorphous silicon -- 3. The electronic density of states -- 4. Defects and their electronic states -- 5. Substitutional doping -- 6. Defect reactions, thermal equilibrium and metastability -- 7. Electronic transport -- 8. Recombination of excess carriers -- 9. Contacts, interfaces and multilayers -- 10. Amorphous silicon device technology. | |
650 | 0 | |a Silicon. |9 206368 | |
650 | 0 | |a Amorphous semiconductors. |9 239248 | |
650 | 0 | |a Surface chemistry. |9 8229 | |
650 | 4 | |a Silikon. |9 206365 | |
650 | 4 | |a Şekilsiz yarı iletkenler. |9 239249 | |
650 | 4 | |a Yüzey kimyası. |9 214432 | |
856 | 4 | 1 | |a Sample text |u http://www.loc.gov/catdir/samples/cam034/90002387.html |
856 | 4 | 2 | |a Publisher description |u http://www.loc.gov/catdir/description/cam024/90002387.html |
856 | 4 | 1 | |a Table of contents |u http://www.loc.gov/catdir/toc/cam028/90002387.html |
910 | |a 2550702010609002739 | ||
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