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880322s1988 paua b 10100 eng |
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|a 0931837707
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|a TRMEMSKU
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|a eng
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|a TR7VH
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|a TK7871.85
|b EPI 1988
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|a Epitaxy of semiconductor layered structures :
|b symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A. /
|c Ed. R.T. Tung, L.R. Dawson, R.L. Gunshor.
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|a Pittsburgh, Pa. :
|b Materials Research Society,
|c c1988.
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|a xv, 609 s. :
|b res. ;
|c 24 cm.
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|a Materials Research Society symposium proceedings,
|x 0272-9172 ;
|v v. 102
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|a Dizin var.
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|a Bibliyografya var.
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|a Fundamentals of epitaxial growth and microstructures of epitaxial interfaces -- Epitaxial growth of II-VI compound semiconductors -- Growth and properties of epitaxial structures -- Heteroepitaxy on Si: epitaxial semiconductors, metals and insulators -- Epitaxial growth of III-V compound semicounductors -- Structural, electrical, and optical properties of heterojunctions
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|a YARI İLETKENLER
|x YAPI VE TASARIM
|v KONGRELER.
|9 179428
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|a EPİTAKSİ
|v KONGRELER.
|9 179429
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|a TABAKA YAPISI (KATILAR)
|v KONGRELER.
|9 179430
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|a Tung, R. T.
|q (Raymond T.)
|9 179431
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|a Dawson, L. R.
|9 179432
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|a Gunshor, Robert L.
|9 179433
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|a Materials Research Society.
|9 179434
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|a Materials Research Society symposia proceedings ;
|v v. 102.
|9 261037
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